TI's 600V GaN FET power level revolutionizes high-performance power conversion efficiency
Based on decades of innovative experience in power management, Texas Instruments (TI) recently announced the launch of a 600V gallium nitride (GaN) 70 m Ù field-effect transistor (FET) power level engineering sample, making TI the first and only semiconductor manufacturer to provide GaN solutions with integrated high-voltage drivers to the public. Compared to solutions based on silicon material FET, this new 12A LMG3410 power stage combined with TI's analog and digital power conversion controller enables designers to create smaller, more efficient, and better performing designs. These advantages are particularly important in isolated high-voltage industries, telecommunications, enterprise computing, and renewable energy applications. For more information, please visit www.ti.com.cn/lmg3410-pr-cn
Through over 3 million hours of reliable testing, LMG3410 has instilled confidence in power designers about the unlimited potential of GaN, and has led them to rethink power architecture and systems using methods previously deemed unfeasible, "said Steve Lambouses, Vice President of High Voltage Power Solutions at TI. ”
With the help of integrated drivers and zero reverse recovery current, LMG3410 provides reliable performance, especially in hard switching applications; In these applications, it can greatly reduce switch losses, up to 80%. Unlike standalone GaN FETs, the easy-to-use LMG3410 integrates built-in intelligence for temperature, current, and under voltage lockout (UVLO) fault protection.
Verified manufacturing and packaging expertise
LMG3410 is the first semiconductor integrated circuit (IC) to include GaN FET produced by TI. Based on years of expertise in manufacturing and manufacturing processes, TI has created GaN devices in its silicon compatible factories, and through continuous practice, the quality of these devices exceeds the requirements of the Electronic Components Industry Council (JEDEC) standards to ensure the reliability and robust durability of GaN in harsh usage environments. Easy to use packaging will help increase the deployment and adoption of GaN power supply designs in applications such as power factor controllers (PFC) AC/DC converters, high-voltage DC bus converters, and photovoltaic (PV) inverters.
Main features and advantages of LMG3410
Double the power density. Compared with advanced boost power factor converters based on silicon materials, the power loss of the 600V power stage in totem pole PFC is 50% lower. The reduced Bill of Materials (BOM) quantity and higher efficiency can reduce the size of the power supply by up to 50%.
Reduce parasitic inductance in packaging. Compared to the discrete GaN solution, the new device's 8mmx8mm quad flat no lead (QFN) package reduces power loss, component voltage stress, and electromagnetic interference (EMI).
• Can achieve a completely new topology. The zero reverse charge recovery of GaN is beneficial for novel switching topologies, including totem pole PFC and LLC topologies, to increase power density and efficiency.
Expanding the GaN ecosystem
In order to enable designers to leverage the advantages of GaN technology in their power design, TI has also launched a new product to expand its GaN ecosystem. LMG5200POLEVM-10， A 48V to 1V load point (POL) evaluation module will include a brand new TPS53632G GaN FET controller paired with an 80V LMG5200 GaN FET power stage. This solution can achieve up to 92% efficiency in industrial, telecommunications, and data communication applications.
2020-09-04Reading volume：6312
